High purity GaAs single crystals produced by the vertical gradient freeze (VGF) growth method, after cutting, grinding, and polishing, can reach >55% transmittance in the 2~12um infrared band. In case of relatively thick products (>3 mm), the transmittance will gradually decrease as the thickness increases, generally around 51% to 55%. GaAs can be used in practical applications where the strength and stiffness of the IR material are critical factors, and can also be used in carbon dioxide laser applications as an alternative to ZnSe optical lenses or mirrors.
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