Indium Antimonide (InSb), as a kind of III-V semiconductor crystal material, has a very narrow band gap a very small effective mass of electrons and a very high electron mobility, which has gained important applications in the field of magnetoresistive components and Hall devices and other industrial technologies. InSb-based infrared detectors have very high quantum efficiency and response rate in the 3~5μm band, which makes it the preferred material for mid-wave infrared detectors.
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