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InAs single crystals can be used as the substrates for the growth of InAsSb/nAsPSb, InNAsSb, heterojunction and InAs/GaSb superlattice structure, which can be used to produce infrared light-emitting devices with the wavelengths of 2~14μm, and mid-infrared quantum cascade lasers, and these infrared devices have a good prospect of application in the field of gas monitoring and low-loss fiber communication. In addition, InAs single crystals has electron mobility, which is an ideal material for Hall devices.
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